Samsung creates UFS 4.0 flash memory with a transfer rate of 23.2GB/s per lane.


South Korean company Samsung recently announcedUFS 4.0 flash memory development According to the company, this is the industry’s fastest solution, with improved energy efficiency.

UFS 4.0 memory has a per-lane speed of 23.2 GB/s. This is more than twice as much as the current UFS 3.1 memory capacity. This speed, according to Samsung representatives, is ideal for 5G-enabled smartphones, as well as unmanned vehicles, virtual reality, and augmented reality.

Furthermore, sequential reading and writing speeds will improve, reaching 4200 MB/s and 2800 MB/s, respectively. Samsung’s advanced 7th generation V-NAND memory is responsible for all of this.

UFS 4.0 will use 46% less energy than the previous version. A total of 1 terabyte of memory will be available. In the third quarter of 2022, production will start.


Oliver Barker

Est né à Bristol et a grandi à Southampton. Il est titulaire d'un baccalauréat en comptabilité et économie et d'une maîtrise en finance et économie de l'Université de Southampton. Il a 34 ans et vit à Midanbury, Southampton.

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